STD9N10L n - channel 100v - 0.22 w - 9a - ipak/dpak power mos transistor n typical r ds(on) = 0.22 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n high current capability n 175 o c operating temperature n high dv/dt ruggedness n application oriented characterization n surface-mounting dpak (to-252) power package in tape & reel (suffix ot4o) applications n high current, high speed switching n power motor control n dc-dc & dc-ac converters n syncronous rectification internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 100 v v dgr drain- gate voltage (r gs =20k w ) 100 v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c9a i d drain current (continuous) at t c = 100 o c 6.4 a i dm ( ? ) drain current (pulsed) 36 a p tot total dissipation at t c =25 o c45w derating factor 0.3 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 7 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area type v dss r ds(on) i d std20n03l 30 v < 0.02 w 20 a (*) september 1998 1 3 dpak to-252 (suffix ot4o) 3 2 1 ipak to-251 (suffix o-1o) 1/6
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 3.33 100 1.5 275 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 9a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =25v) 25 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 100 v i dss zero g ate voltage drain current (v gs =0) v ds =maxrating v ds =maxratingx0.8 t c =125 o c 10 100 m a m a i gss gate-body leakage current (v ds =0) v gs = 15 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a 11.72.5v r ds(on) static drain-source on resistance v gs =5v i d =4.5a v gs = 10v i d =4.5a t c =100 o c 0.22 0.21 0.27 0.25 w w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =5v 9a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =4.5a 4 7 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs =0 520 90 30 700 120 40 pf pf pf ? STD9N10L 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd =50v i d =4.5a r g =4.7 w v gs =5v 10 25 14 35 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =80v i d =9a v gs =10v 13 5.5 6 18 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =80v i d =9a r g =4.7 w v gs =5v 10 10 25 14 14 35 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 9 36 a a v sd ( * ) forward on voltage i sd =9a v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =9a di/dt=100a/ m s v dd =25v t j = 150 o c 110 0.4 7.2 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area ? STD9N10L 3/6
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 13 == b e == b2 g 2 a c2 c h a1 detail oao a2 detail oao to-252 (dpak) mechanical data 0068772-b ? STD9N10L 4/6
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a3 0.7 1.3 0.027 0.051 b 0.64 0.9 0.025 0.031 b2 5.2 5.4 0.204 0.212 b3 0.85 0.033 b5 0.3 0.012 b6 0.95 0.037 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 15.9 16.3 0.626 0.641 l 9 9.4 0.354 0.370 l1 0.8 1.2 0.031 0.047 l2 0.8 1 0.031 0.039 a c2 c a3 h a1 d l l2 l1 13 == b3 b b6 b2 e g == == b5 2 to-251 (ipak) mechanical data 0068771-e ? STD9N10L 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . ? STD9N10L 6/6
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